Topographical dependence of charging and new phenomenon during inductively coupled plasma (ICP) CVD process

International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings

Volumn , Issue , 2000, Pages 164-167

  Carrere, J P ^a   Oberlin, J C ^a   Haond, M ^a  

^a ORANGE LABS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; GATES (TRANSISTOR); LEAKAGE CURRENTS; MOS DEVICES; PLASMA INTERACTIONS; RELIABILITY; SILICON WAFERS;

HIGH DENSITY PLASMA CHEMICAL VAPOR DEPOSITION PROCESS; INDUCTIVELY COUPLED PLASMA CHEMICAL VAPOR DEPOSITION PROCESS; TOPOGRAPHICAL DEPENDENT CHARGING;

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

EID: 0034512399     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (11)