Suppression of thermal interface degradation in (111) Si/SiO2 by noble gases

Applied Physics Letters

Volumn 74, Issue 10, 1999, Pages 1466-1468

  Stesmans, A ^a   Afanas'ev, V V ^a   Revesz, A G ^b  

^a UNIVERSITY OF LEUVEN   (Belgium)

^b Revesz Associates   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000757199     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123595     Document Type: Article

References (29)

1. See, e.g., Y. C. Cheng, Progr. Surf. Sci. 8, 181 (1977), and references therein.
2. D. M. Brown and P. V. Gray, J. Electrochem. Soc. 115, 760 (1968).
3. F. Montillo and P. Balk, J. Electrochem. Soc. 118, 1463 (1971).
4. B. H. Vromen, Appl. Phys. Lett. 27, 152 (1975).
5. K. Hoffmann, G. W. Rubloff, and D. R. Young, J. Appl. Phys. 61, 4584 (1987).
6. P. Balk, M. Aslam, and D. R. Young, Solid-State Electron. 27, 709 (1984).
7. R. E. Walkup and S. I. Raider, Appl. Phys. Lett. 53, 888 (1988); C. Wagner, J. Appl. Phys. 29, 1295 (1958).
8. R. E. Walkup and S. I. Raider, Appl. Phys. Lett. 53, 888 (1988); C. Wagner, J. Appl. Phys. 29, 1295 (1958).
9. G. F. Derbenwick and B. L. Gregory, IEEE Trans. Nucl. Sci. NS-22, 2151 (1975).
10. R. Tromp, G. W. Rubloff, P. Balk, and F. K. LeGoues, Phys. Rev. Lett. 55, 2332 (1985).
11. Y.-K. Sun, D. J. Bonser, and T. Engel, J. Vac. Sci. Technol. A 10, 2314 (1992).
12. Y. Wei, R. M. Wallace, and A. C. Seabough, Appl. Phys. Lett. 69, 1270 (1996).
13. R. A. B. Devine, D. Mathiot, W. L. Warren, and B. Aspar, J. Appl. Phys. 79, 2302 (1996); M. E. Zvanut, T. L. Chen, R. E. Stahlbush, E. S. Steigerwalt, and G. A. Brown, ibid. 77, 4329 (1995).
14. R. A. B. Devine, D. Mathiot, W. L. Warren, and B. Aspar, J. Appl. Phys. 79, 2302 (1996); M. E. Zvanut, T. L. Chen, R. E. Stahlbush, E. S. Steigerwalt, and G. A. Brown, ibid. 77, 4329 (1995).
15. A. Stesmans and V. V. Afanas'ev, Phys. Rev. B 54, R11 129 (1996).
16. A. Stesmans, Phys. Rev. B 48, 2418 (1993).
17. See, e.g., R. Helms and E. H. Poindexter, Rep. Prog. Phys. 57, 791 (1994).
18. K. H. Zaininger and A. G. Revesz, Appl. Phys. Lett. 7, 108 (1965).
19. J. F. Shackelford and J. S. Masaryk, J. Non-Cryst. Solids 30, 127 (1978).
20. J. E. Shelby, J. Appl. Phys. 47, 135 (1976); G. S. Nakayama and J. Shackelford, J. Non-Cryst. Solids 126, 249 (1990).
21. J. E. Shelby, J. Appl. Phys. 47, 135 (1976); G. S. Nakayama and J. Shackelford, J. Non-Cryst. Solids 126, 249 (1990).
22. 2, edited by R. A. B. Devine (Plenum, New York, 1988), p. 297.
23. See, e.g., R. E. Cunningham and R. J. J. Williams, Diffusion in Gases and Porous Media (Plenum, New York, 1980).
24. J. F. Shackelford, A. G. Revesz, and H. L. Hughes, in Reactivity of Solids, edited by P. Barret and L.-C. Dufour (Elsevier, Amsterdam, 1985), p. 279.
25. See, e.g., J. O. Hirschfelder, C. F. Curtiss, and R. Byron, Molecular Theory of Gases and Liquids (Wiley, New York, 1954), p. 1100.
26. SiO ∼ 4.3 Å is estimated.
27. E. Kobeda and E. A. Irene, J. Vac. Sci. Technol. B 6, 574 (1988); J. T. Fitch, C. H. Bjorkman, G. Lucovsky, F. H. Pollak, and X. Yin, J. Vac. Sci. Technol. B 7, 775 (1989).
28. E. Kobeda and E. A. Irene, J. Vac. Sci. Technol. B 6, 574 (1988); J. T. Fitch, C. H. Bjorkman, G. Lucovsky, F. H. Pollak, and X. Yin, J. Vac. Sci. Technol. B 7, 775 (1989).
29. E. A. Taft, J. Electrochem. Soc. 125, 968 (1978).