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Surface Science

Volumn 411, Issue 1-2, 1998, Pages 61-69

The surface morphology of Si (100) after carbon deposition

(2) Butz, R a Luth H a

a FORSCHUNGSZENTRUM JÜLICH (Germany)

Author keywords

Epitaxy; Scanning tunnelling microscopy; Silicon; Surface morphology

Indexed keywords

CARBON; COMPOSITION EFFECTS; CRYSTAL DEFECTS; CRYSTAL ORIENTATION; DEPOSITION; EPITAXIAL GROWTH; LOW ENERGY ELECTRON DIFFRACTION; MONOLAYERS; MORPHOLOGY; SCANNING TUNNELING MICROSCOPY; SURFACE STRUCTURE;

PATCHWISE GROWTH PROCESS;

SEMICONDUCTING SILICON;

EID: 0032140790 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(98)00328-8 Document Type: Article

Times cited : (48)

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