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Volumn 414, Issue 3, 1998, Pages 353-362

Observations regarding a c(4 × 4) C-Si(100) surface

a BROOKHAVEN NATIONAL LABORATORY (United States)

Author keywords

Carbon; Low energy electron diffraction; Semiconducting surfaces; Silicon; Single crystal surfaces; Soft X ray photoemission

Indexed keywords

ANNEALING; ELECTRON ENERGY LEVELS; EVAPORATION; GRAPHITE; LOW ENERGY ELECTRON DIFFRACTION; SINGLE CRYSTALS; SURFACE CHEMISTRY; SURFACE PHENOMENA; SURFACE STRUCTURE;

SOFT X-RAY PHOTOEMISSION; SURFACE RECONSTRUCTION;

SEMICONDUCTING SILICON;

EID: 0032163318 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(98)00437-3 Document Type: Article

Times cited : (28)

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