Initial stage for heteroepitaxy of 3C-SiC on the Si(001) surface in dimethylgermane source molecular beam epitaxy

Applied Physics Letters

Volumn 70, Issue 11, 1997, Pages 1411-1413

  Hatayama, Tomoaki ^a   Tanaka, Norihiro ^a   Fuyuki, Takashi ^a   Matsunami, Hiroyuki ^a  

^a Dept of Electronics Sci and Eng ^*  (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000766792     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118569     Document Type: Article

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