Investigation of trapping levels in standard, nitrogenated and oxygenated Si p-n junctions by thermally stimulated currents: CERN project RD48 (The ROSE collaboration)

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 439, Issue 2-3, 2000, Pages 303-309

  Pintilie, I ^a   Petre, D ^a   Pintilie, L ^a   Tivarus, C ^a   Petris, M ^b   Botila, T ^a  

^a NATIONAL INSTITUTE OF MATERIALS PHYSICS   (Romania)

^b HORIA HULUBEI NATIONAL INSTITUTE OF PHYSICS AND NUCLEAR ENGINEERING   (Romania)

Author keywords

p n junctions; Protons; Silicon detectors; Thermally stimulated currents; Trapping levels

Indexed keywords

ACTIVATION ENERGY; CRYSTAL IMPURITIES; ELECTRIC CURRENTS; ELECTRON ENERGY LEVELS; PROTON IRRADIATION; SEMICONDUCTING SILICON; SEMICONDUCTOR JUNCTIONS; THERMAL EFFECTS;

NITROGENATION; OXYGENATION; SEMICONDUCTOR DETECTORS; THERMALLY STIMULATED CURRENTS (TSC);

PARTICLE DETECTORS;

EID: 0033898051     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(99)00845-1     Document Type: Article

References (20)

1. H.W. Kraner, Z. Li, K.U. Posnecker, Nucl. Instr. and Meth. A 279 (1989) 266.
2. L. Beattie, A. Chilingarov, P. Ratoff, T. Sloan, ROSE Technical Note 97/4, March 1997.
3. J. Matheson, M. Robbins, S. Watts, G. Hall, B. MacEvoy, RD20 Technical Note 95/43, May 1995.
4. W.v. Ammon, P. Dreier, W. Hensel, U. Lambert, L. Koster, Mater. Sci. Eng. B 36 (1996) 33.
5. S. Watts, Paper presented at the Proceeding vol. "Detector Seminar" of Second Workshop on Radiation Hardening of Silicon Detectors, CERN-Geneve, 4-5 February, 1997, pp. 1.
6. E. Borchi, M. Bruzzi, La Riv. Nuovo Cimento 11 (1994) 1.
7. S.J. Bates et al., Nucl. Instr. and Meth. A 344 (1994) 228.
8. E. Fretwurst et al., Nucl. Instr. and Meth. A 342 (1994) 119.
9. J.F. Barbot et al., Nucl. Instr. and Meth. B 95 (1995) 213.
10. I. Pintilie, T. Botila, L. Pintilie, D. Petre, Paper presented at the Proceeding of Third Workshop on Radiation Hardening of Silicon Detectors, DESY-Hamburg, 12-14 February, 1998, pp. 122.
11. R.H. Bube, Photoelectronic Properties of Semiconductors, Cambridge University Press, Cambridge, 1992.
12. K.H. Nicholas, J. Woods, Brit. J. Appl. Phys. 15 (1965) 783.
13. L. Forbes, C.T. Sah, Solid-State Electron. 14 (1971) 182.
14. D.V. Lang, Thermally Stimulated Relaxation in Solids, Springer, Berlin, 1979.
15. I. Pintilie, C. Tivarus, T. Botila, D. Petre, L. Pintilie, Nucl. Intr. and Meth. A 439 (2000) 221.
16. C.D. Thurmond, J. Electrochem. Soc. 122 (1975) 1133.
17. J.A. Van Vechten, C.D. Thurmond, Phys. Rev. B 14 (1976) 3539.
18. B. MacEvoy, Paper presented at the Proceeding of Third Workshop on Radiation Hardening of Silicon Detectors, DESY-Hamburg, 12-14 February, 1998, pp. 145.
19. P. Braunlich, Thermally Stimulated Relaxation in Solids, Springer, Berlin, 1979.
20. S.J. Bates et al., CERN-ECP/95-18 Internal Report, presented at RADECS'95, Arcachon-France, Sept. 1995.