Microscopic studies of radiation damage-induced defects responsible for the deterioration of high-resistivity silicon detectors

Solid State Phenomena

Volumn 57-58, Issue , 1997, Pages 233-238

  Feick, H ^a   Moll, M ^a  

^a UNIVERSITY OF HAMBURG   (Germany)

Author keywords

Annealing; Bistable; Defects; DLTS; Fz silicon; Radiation damage; TSC

Indexed keywords

ANNEALING; DEEP LEVEL TRANSIENT SPECTROSCOPY; DEFECTS; DETERIORATION; RADIATION DAMAGE; SEMICONDUCTOR DEVICE MANUFACTURE; CRYSTAL DEFECTS; ELECTRIC SPACE CHARGE; ELECTRON ENERGY LEVELS; MICROSCOPIC EXAMINATION;

BISTABLE DEFECTS; BISTABLES; FAST NEUTRONS; FLOAT ZONE SILICON; HIGH RESISTIVITY; HIGH RESISTIVITY SILICON; INDUCED DEFECTS; MICROSCOPIC STUDY;

SILICON DETECTORS; SILICON SENSORS;

FLOAT ZONE SILICON; HIGH RESISTIVITY SILICON DETECTORS;

EID: 0031331281     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/ssp.57-58.233     Document Type: Article

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