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Volumn 388, Issue 3, 1997, Pages 323-329

Analysis of TSC spectra measured on silicon pad detectors after exposure to fast neutrons

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRON ENERGY LEVELS; HEATING; IRRADIATION; NEUTRON IRRADIATION; NEUTRONS; RADIATION DAMAGE; SEMICONDUCTOR JUNCTIONS; SILICON; TEMPERATURE;

EID: 0031120187     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(96)01264-8     Document Type: Article
Times cited : (4)

References (20)
  • 8
    • 0031121260 scopus 로고    scopus 로고
    • Int. conf. on radiation effects on semiconductor materials, detectors and devices, Florence, Italy, 1996
    • M. Moll et al., these Proceedings (Int. Conf. on Radiation Effects on Semiconductor Materials, Detectors and Devices, Florence, Italy, 1996), Nucl. Instr. and Meth. A 388 (1997) 335.
    • (1997) Nucl. Instr. and Meth. A , vol.388 , pp. 335
    • Moll, M.1
  • 13
    • 0042443481 scopus 로고    scopus 로고
    • Diploma Thesis, University of Hamburg
    • P. Heydarpoor, Diploma Thesis, University of Hamburg (1996).
    • (1996)
    • Heydarpoor, P.1
  • 20
    • 0042443482 scopus 로고
    • PhD Thesis, University of Hamburg
    • T. Schulz, PhD Thesis, University of Hamburg (1995).
    • (1995)
    • Schulz, T.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.