Correlation between a deep hole trap and the reverse annealing effect in neutron-irradiated silicon detectors

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 409, Issue 1-3, 1998, Pages 194-197

  Moll, M ^a   Feick, H ^a   Fretwurst, E ^a   Lindstrom G ^a  

^a UNIVERSITY OF HAMBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COMPOSITION EFFECTS; NEUTRON IRRADIATION; SEMICONDUCTOR DOPING; SILICON SENSORS; THERMAL EFFECTS;

SEMICONDUCTOR DETECTORS; THERMALLY STIMULATED CURRENTS (TSP);

RADIATION DETECTORS;

EID: 0032065950     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(97)01260-6     Document Type: Article

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