Experimental evidence of deep electron and hole trapping levels in high fluence proton irradiated p-n Si junctions using optical charging spectroscopy: Contribution to the R&D 48 CERN project (The ROSE collaboration)

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 439, Issue 2-3, 2000, Pages 221-227

  Pintilie, I ^a   Tivarus, C ^a   Botila, T ^a   Petre, D ^a   Pintilie, L ^a  

^a NATIONAL INSTITUTE OF MATERIALS PHYSICS   (Romania)

Author keywords

P n junctions; Protons; Silicon detectors; Trapping levels

Indexed keywords

ELECTRIC CURRENTS; ELECTRON TRAPS; HOLE TRAPS; MATHEMATICAL MODELS; PROTON IRRADIATION; SEMICONDUCTING SILICON; SEMICONDUCTOR JUNCTIONS;

OPTICAL CHARGING SPECTROSCOPY (OCS); SEMICONDUCTOR DETECTORS;

PARTICLE DETECTORS;

EID: 0033883915     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(99)00887-6     Document Type: Article

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