Investigation on the Neff reverse annealing effect using TSC/I-DLTS: Relationship between neutron induced microscopic defects and silicon detector electrical degradations

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 377, Issue 2-3, 1996, Pages 265-275

  Li, Z ^a   Li, C J ^a,b   Eremin, V ^a,c   Verbitskaya, E ^a,c  

^a BROOKHAVEN NATIONAL LABORATORY   (United States)

^b INSTITUTE OF SEMICONDUCTORS   (China)

^c IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITANCE; CARRIER CONCENTRATION; CRYSTAL DEFECTS; CURRENT VOLTAGE CHARACTERISTICS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC SPACE CHARGE; HIGH TEMPERATURE EFFECTS; LEAKAGE CURRENTS; NEUTRON IRRADIATION; PARTICLE DETECTORS; SEMICONDUCTING SILICON;

OPTICAL FILLING TECHNIQUES; REVERSE ANNEALING EFFECTS; SEMICONDUCTOR MICROSCOPIC DEFECT ANALYSIS SYSTEM; SILICON BANDGAP; SPACE CHARGE DENSITY; THERMALLY STIMULATED CURRENT;

RADIATION DAMAGE;

EID: 0030211485     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-9002(95)01410-1     Document Type: Article

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