Penetration of electronic states from silicon substrate into silicon oxide

Applied Surface Science

Volumn 190, Issue 1-4, 2002, Pages 56-59

  Takahashi, K ^a   Seman, M B ^a   Hirose, K ^b   Hattori, T ^a  

^a TOKYO CITY UNIVERSITY   (Japan)

^b JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

Author keywords

Energy loss spectroscopy; O 1s photoelectron; Silicon oxide; SiO2 Si interface; Transition layer; X ray photoelectron spectroscopy

Indexed keywords

BAND STRUCTURE; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRONS; INTERFACES (MATERIALS); MOSFET DEVICES; SILICA; SILICON WAFERS; SUBSTRATES; X RAY PHOTOELECTRON SPECTROSCOPY;

PHOTOELECTRONS; TRANSITION LAYERS;

ELECTRONIC DENSITY OF STATES;

EID: 0037042048     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(01)00837-6     Document Type: Article

References (20)