Hot-carrier-induced degradation for partially depleted SOI 0.25-0.1 μm CMOSFET with 2-nm thin gate oxide

IEEE Transactions on Electron Devices

Volumn 49, Issue 12, 2002, Pages 2157-2162

  Yeh, Wen Kuan ^a   Wang, Wen Han ^b   Fang, Yean Kuen ^b   Chen, Mao Chieh ^c   Yang, Fu Liang ^d  

^a NATIONAL UNIVERSITY OF KAOHSIUNG   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^d TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

Hot carrier effect; Hot carrier induced degradation; Partially depleted SOI

Indexed keywords

BIPOLAR TRANSISTORS; DEGRADATION; ELECTRON TUNNELING; ION IMPLANTATION; LOW TEMPERATURE OPERATIONS; MOSFET DEVICES; NITRIDES; NITROGEN OXIDES; OXIDATION; POLYSILICON; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES;

BODY-CONTACT SILICON ON INSULATOR; FLOATING BODY EFFECT; FLOATING-BODY SILICON ON INSULATOR; HOT-CARRIER-INDUCED DEGRADATION; NITRIDE GATE OXIDE; PARASITIC BIPOLAR TRANSISTOR EFFECT; RAPID THERMAL OXIDATION;

HOT CARRIERS;

EID: 0036999714     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2002.805617     Document Type: Article

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