Temperature dependency of 0.1 μm partially depleted SOI CMOSFET

IEEE Electron Device Letters

Volumn 22, Issue 7, 2001, Pages 339-341

  Yeh, Wen Kuan ^a,b   Huang, Chiutsung ^c   Chen, Mao Chieh ^d  

^a IEEE   (Taiwan)

^b NATIONAL UNIVERSITY OF KAOHSIUNG   (Taiwan)

^c UNITED MICROELECTRONICS CORPORATION   (Taiwan)

^d NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

BC SOI; FB SOI; FBE; Partially depleted SOI; Thermal effect

Indexed keywords

FLOATING BODY EFFECT; OFF STATE DRAIN CURRENT; SILICON ON INSULATOR;

ELECTRIC CURRENTS; ELECTRON DEVICE MANUFACTURE; MOSFET DEVICES; SILICON; THERMAL EFFECTS; THRESHOLD VOLTAGE;

CMOS INTEGRATED CIRCUITS;

EID: 0035395931     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.930684     Document Type: Article

References (7)

1. A 0.2um 1.8V SOI 550MHz 64b PowerPC microprocessor with copper interconnects
2. Scalability of SOI technology into 0.13 um 1.2V CMOS generation
3. Suppression of the SOI floating-body effects by linked-body device structure
4. Scalability of partially depleted SOI technology for sub-0.25um logic applications
5. Subbreakdown drain leakage current in MOSFET
6. Scalable PD/SOI CMOS with floating bodies