Hot carrier reliability for 0.13μm CMOS technology with dual gate oxide thickness

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2000, Pages 135-137

  Lin, C ^a   Biesemans, S ^a   Han, L K ^a   Houlihan, K ^a   Schiml, T ^a   Schruefer, K ^a   Wann, C ^a   Chen, J ^a   Mahnkopf, R ^a  

^a INFINEON TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; ELECTRON TRAPS; HOLE TRAPS; HOT CARRIERS; RELIABILITY; SEMICONDUCTOR DEVICE MANUFACTURE; THERMAL EFFECTS;

GATE VOLTAGE; ULTRA-THIN GATE OXIDE;

CMOS INTEGRATED CIRCUITS;

EID: 0034452616     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)