Correlation between hot-carrier-induced interface states and GIDL current increase in N-MOSFET's

IEEE Transactions on Electron Devices

Volumn 45, Issue 2, 1998, Pages 521-528

  Lai, P T ^a   Xu, J P ^a   Wong, W M ^b   Lo, H B ^b   Cheng, Y C ^b  

^a UNIVERSITY OF HONG KONG   (Hong Kong)

^b HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CURRENT MEASUREMENT; GATES (TRANSISTOR); HOT CARRIERS; INTERFACES (MATERIALS); LEAKAGE CURRENTS; SEMICONDUCTOR DEVICE MODELS;

GATE INDUCED DRAIN LEAKAGE (GIDL) CURRENTS; HOT CARRIER INDUCED INTERFACE STATES;

MOSFET DEVICES;

EID: 0032000296     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.658689     Document Type: Article

References (12)

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