Random telegraph signal noise mechanisms in reverse base current of hot carrier-degraded submicron bipolar transistors: Effect of carrier trapping during stress on noise characteristics

Journal of Applied Physics

Volumn 89, Issue 7, 2001, Pages 4049-4058

  Pogany, D ^a   Chroboczek, J A ^b   Ghibaudo, G ^c  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

^b Research and Development Center Grenoble   (France)

^c Grenoble INP Phelma   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035309491     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1352560     Document Type: Article

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