ZrO2 as a high-κ dielectric for strained SiGe MOS devices

Bulletin of Materials Science

Volumn 25, Issue 6, 2002, Pages 455-457

  Mahapatra, R ^a   Kar, G S ^a   Samantaray, C B ^a   Dhar, A ^a   Bhattacharya, D ^a   Ray, S K ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY   (India)

Author keywords

High dielectric; SiGe MOS devices; ZrO2

Indexed keywords

LEAKAGE CURRENTS; MAGNETRON SPUTTERING; MOSFET DEVICES; SEMICONDUCTING SILICON COMPOUNDS; ZIRCONIUM COMPOUNDS;

CAPACITANCE VOLTAGE CHARACTERISTICS; CHARGE TRAPPING; CONSTANT CURRENT STRESSING; INTERFACE STATE DENSITY;

DIELECTRIC MATERIALS;

EID: 0036869461     PISSN: 02504707     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02710526     Document Type: Article

References (18)

1. Autran J L, Devine R, Chaneliere C and Balland B 1997 IEEE Electron Device Lett. 18 447
2. Buchanan D A and Lo S H 1997 Microelectron. Eng. 36 13
3. Crabbe E F, Comfort J H, Lee W, Cressler J D, Meyerson B S, Megdanis A C, Sun J Y C and Stork J M C 1992 IEEE Electron. Device Lett. 13 259
4. Guo X, Ma T P, Tamagawa T and Halpern B L 1998 Tech. Dig. Int. Electron. Devices Meet. 377
5. Hao M Y, Maiti B and Lee J C 1994 Appl. Phys. Lett. 64 2102
6. He B, Ma T, Campbell S A and Gladfelter W L 1998 Tech. Dig. Int. Electron Devices Meet. 1038
7. Hubbard K J and Scholm D G 1996 J. Mater. Res. 11 2757
8. Hull R, Bean J C, Werder D J and Leibenguth R E 1988 Appl. Phys. Lett. 52 1605
9. Le Goues F K, Rosenberg R and Meyerson B S 1989 Appl. Phys. Lett. 54 644
10. Luan H F, Wu B Z, Kang L G, Kim B Y, Vrtis R, Roberts D and Kwong D L 1998 Tech. Dig. Int. Electron. Devices Meet. 609
11. Mckee R A, Walker F J and Chisholm M F 1998 Phys. Rev. Lett. 81 3014
12. Park D, Lu Q, Ling T J, Hu C, Kalnitsky A, Tay S and Cheng C C 1998 Tech. Dig. Int. Electron. Devices Meet. 381
13. People R 1986 IEEE J. Quantum Electron. 22 1696
14. Robertson J, Riassi E, Maria J P and Kingon A L 2000 J. Vac. Sci. Technol. B18 1785
15. Sharma R, Fretwell J L, Ngai T and Banerjee S 1999 J. Vac. Sci. Technol. B17 460
16. Tchikatilov D, Yang Y F and Yang E S 1996 Appl. Phys. Lett. 69 2578
17. Terman M L 1962 Solid State Electron. 5 285
18. van Dover R B, Fleming R M, Schneemeyer L F, Alers G B and Werder D J 1998 Tech. Dig. Int. Electron Devices Meet. 823