Thin-film transistors in polycrystalline silicon by blanket and local source/drain hydrogen plasma-seeded crystallization

IEEE Transactions on Electron Devices

Volumn 47, Issue 8, 2000, Pages 1599-1607

  Pangal, Kiran ^a,b   Sturm, James C ^a,c   Wagner, Sigurd ^a,c   Yao, Nan ^d  

^a IEEE

^b INTEL CORPORATION   (United States)

^c Princeton University   (United States)

^d PRINCETON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLIZATION; DEPOSITION; GRAIN SIZE AND SHAPE; HYDROGEN; LEAKAGE CURRENTS; PLASMA APPLICATIONS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON;

HYDROGEN PLASMA SEEDED CRYSTALLIZATION;

THIN FILM TRANSISTORS;

EID: 0034251092     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.853037     Document Type: Article

References (23)

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