A temperature-dependent nonlinear analysis of GaN/AlGaN HEMTs using volterra series

IEEE Transactions on Microwave Theory and Techniques

Volumn 49, Issue 9, 2001, Pages 1518-1524

  Ahmed, Arif ^a,b   Islam, Syed S ^a,b   Anwar, A F M ^a,b  

^a University of Connecticut   (United States)

^b IEEE   (United States)

Author keywords

GaN high electron mobility transistors; Inter modulation distortion; Power amplifier; Volterra series

Indexed keywords

VOLTERRA SERIES;

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; INTERMODULATION; POWER AMPLIFIERS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; THERMAL EFFECTS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0035445409     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.942561     Document Type: Article

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