Mechanism of electromigration failure in submicron Cu interconnects

Journal of Electronic Materials

Volumn 31, Issue , 2002, Pages 1004-1008

  Michael, Nancy L ^a   Kim, Choong Un ^a   Jiang, Qing Tang ^b,c   Augur, R A ^b,d   Gillespie, P ^b,c  

^a UNIVERSITY OF TEXAS AT ARLINGTON   (United States)

^b SEMATECH   (United States)

^c TEXAS INSTRUMENTS   (United States)

^d NXP SEMICONDUCTORS   (Netherlands)

Author keywords

Copper interconnects; Interface diffusion; Interface electromigration; Passivation

Indexed keywords

ACTIVATION ENERGY; COPPER; DIFFUSION; ELECTROMIGRATION; GRAIN BOUNDARIES; PASSIVATION;

INTERFACE DIFFUSION;

INTERCONNECTION NETWORKS;

EID: 0036810464     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-002-0035-5     Document Type: Article

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