Properties of InGaN/GaN quantum wells and blue light emitting diodes

Journal of Luminescence

Volumn 99, Issue 3, 2002, Pages 265-272

  Cheong, M G ^a   Suh, E K ^b   Lee, H J ^b  

^a UNIVERSITY OF STRATHCLYDE   (United Kingdom)

^b Chonbuk National University   (South Korea)

Author keywords

Defect; Interruption time; Light emitting diode; Quantum well

Indexed keywords

ELECTROLUMINESCENCE; ETCHING; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; TRANSMISSION ELECTRON MICROSCOPY;

INTERRUPTION TIME;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0036788743     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-2313(02)00345-9     Document Type: Article

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