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Volumn 39, Issue 4 B, 2000, Pages 2001-2007

A novel diffusion resistant P-base region implantation for accumulation mode 4H-SiC Epi-channel field effect transistor

Author keywords

Current deep level transient spectroscopy; D center; JFET; MOSFET; Pinch effect; Sequential implantation; SiC

Indexed keywords

BORON; CARBON; CHARGE CARRIERS; DEEP LEVEL TRANSIENT SPECTROSCOPY; DIFFUSION; ION IMPLANTATION; MOSFET DEVICES; PINCH EFFECT; SILICON CARBIDE;

P BASE REGION; SEQUENTIAL IMPLANTATION; VERTICAL DIFFUSION;

JUNCTION GATE FIELD EFFECT TRANSISTORS;

EID: 0033723653 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.39.2001 Document Type: Article

Times cited : (18)

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