A comparative analysis of substrate current generation mechanisms in tunneling MOS capacitors

IEEE Transactions on Electron Devices

Volumn 49, Issue 8, 2002, Pages 1427-1435

  Palestri, Pierpaolo ^b   Serra, Alberto Dalla ^b   Selmi, Luca ^a,b   Pavesi, Maura ^c   Rigolli, Pier Luigi ^c   Abramo, Antonio ^a,b   Widdershoven, Frans ^d   Sangiorgi, Enrico ^a,b  

^a IEEE

^b UNIVERSITY OF UDINE   (Italy)

^c UNIVERSITY OF PARMA   (Italy)

^d PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

Anode hole injection (AHI); Monte Carlo simulation; Oxide reliability; Photon emission; Substrate current

Indexed keywords

CAPACITANCE MEASUREMENT; CARRIER CONCENTRATION; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON ABSORPTION; ELECTRON SCATTERING; ELECTRON TUNNELING; HOT CARRIERS; IMPACT IONIZATION; MONTE CARLO METHODS; PHOTOEMISSION; SUBSTRATES;

ANODE HOLE INJECTION; PHOTON EMISSION ABSORPTION; SUBSTRATE CURRENT;

MOS CAPACITORS;

EID: 0036685464     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2002.801439     Document Type: Article

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