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Physical Review B - Condensed Matter and Materials Physics
Volumn 65, Issue 19, 2002, Pages 1952091-1952098
Spontaneous hot-carrier photon emission rates in silicon: Improved modeling and applications to metal oxide semiconductor devices
(5)
Pavesi, M
a
Rigolli, P L
a
Manfredi, M
a
Palestri, P
b
Selmi, L
b
a
UNIVERSITY OF PARMA
(
Italy
)
b
UNIVERSITY OF UDINE
(
Italy
)
Author keywords
[No Author keywords available]
Indexed keywords
METAL OXIDE; SILICON;
ARTICLE; CALCULATION; CHEMICAL ANALYSIS; CONDUCTANCE; ENERGY; LUMINESCENCE; MODEL; PHOTON; PHYSICS; SEMICONDUCTOR; THEORY;
EID
:
0037092785
PISSN
:
01631829
EISSN
:
None
Source Type
:
Journal
DOI
:
10.1103/PhysRevB.65.195209
Document Type
:
Article
Times cited : (
15
)
References (
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