HgCdTe composition determination using spectroscopic ellipsometry during molecular beam epitaxy growth of near-infrared avalanche photodiode device structures

Journal of Electronic Materials

Volumn 31, Issue 7, 2002, Pages 688-693

  De Lyon, T J ^a   Olson, G L ^a   Roth, J A ^a   Jensen, J E ^a   Hunter, A T ^a   Jack, M D ^b   Bailey, S L ^b  

^a Hughes Aircraft Co   (United States)

^b RAYTHEON COMPANY   (United States)

Author keywords

Avalanche photodiodes; Detectors; HgCdTe; Molecular beam epitaxy (MBE); Photodiodes; Spectroscopic ellipsometry

Indexed keywords

AVALANCHE DIODES; COMPOSITION; ELLIPSOMETRY; INFRARED RADIATION; MERCURY COMPOUNDS; MOLECULAR BEAM EPITAXY; SUBSTRATES;

AVALANCHE PHOTODIODES (APD); SPECTROSCOPIC ELLIPSOMETRY (SE);

PHOTODIODES;

EID: 0036638728     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-002-0220-6     Document Type: Article

References (16)