Spectroscopic ellipsometry for monitoring and control of molecular beam epitaxially grown HgCdTe heterostructures

Journal of Electronic Materials

Volumn 26, Issue 6, 1997, Pages 502-506

  Bevan, M J ^a   Almeida, L A ^a,b   Duncan, W M ^a   Shih, H D ^a  

^a TEXAS INSTRUMENTS   (United States)

^b UNIVERSITY OF ILLINOIS AT CHICAGO   (United States)

Author keywords

HgCdTe; In situ control; Infrared (IR) detectors; Molecular beam epitaxy (MBE); Spectroscopic ellipsometry

Indexed keywords

EID: 0000256205     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-997-0184-7     Document Type: Article

References (4)

1. M.B. Reine, P.W. Norton, R. Starr, M.H. Weiler, M. Kestigian, P. Mitra, T. Schimert, F.C. Case, I. Bhat, H. Ehsani and V. Rao, J. Electron. Mater. 24, 699 (1995).
2. M.J. Bevan, W.H. Duncan, G.H. Westphal and H.D. Shih, J. Electron. Mater. 25, 1371 (1996).
3. W.M. Duncan, S.A. Henck, J.W. Kuehne, L.M. Loewenstein and S. Maung, J. Vac. Sci. Technol. B 12, 2779 (1994).
4. W.M. Duncan, M.J. Bevan and H.D. Shih, submitted to J. Vac. Sci. Technol.