Close observation of the geometrical features of an ultranarrow silicon nanowire device

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 6 B, 2002, Pages 4419-4422

  Tsutsumi, Toshiyuki ^a,b   Ishii, Kenichi ^a   Hiroshima, Hiroshi ^a   Kanemaru, Seigo ^a   Suzuki, Eiichi ^a   Tomizawa, Kazutaka ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b MEIJI UNIVERSITY   (Japan)

Author keywords

Coulomb blockade effect; Silicon nanodevice; Silicon nanowire; Silicon on insulator; Transmission electron microscopy

Indexed keywords

COULOMB BLOCKADE; OSCILLATIONS; RAPID THERMAL ANNEALING; REACTIVE ION ETCHING; SEMICONDUCTING SILICON; SILICON ON INSULATOR TECHNOLOGY; TRANSMISSION ELECTRON MICROSCOPY;

ULTRANARROW NANOWIRES;

NANOSTRUCTURED MATERIALS;

EID: 0036614287     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.4419     Document Type: Article

References (20)