Properties of Si nanowire devices fabricated by using an inorganic EB resist process

Superlattices and Microstructures

Volumn 28, Issue 5-6, 2000, Pages 453-460

  Tsutsumi, Toshiyuki ^a   Suzuki, Eiichi ^a   Ishii, Kenichi ^a   Hiroshima, Hiroshi ^a   Yamanaka, Mitsuyuki ^a   Sakata, Isao ^a   Hazra, Sukti ^a   Tomizawa, Kazutaka ^b  

^a ELECTROTECHNICAL LABORATORY   (Japan)

^b MEIJI UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COULOMB BLOCKADE; ELECTRIC PROPERTIES; ELECTRON BEAMS; NANOTECHNOLOGY; PHOTORESISTS; SEMICONDUCTING SILICON; SEMICONDUCTOR QUANTUM DOTS; SILICA; THRESHOLD VOLTAGE;

ELECTRON BEAM RESIST; NANOWIRE DEVICES; SINGLE ELECTRON CHARGING EFFECT; SINGLE ELECTRON MEMORY; SINGLE ELECTRON TRANSISTOR;

SEMICONDUCTOR QUANTUM WIRES;

EID: 0034316394     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1006/spmi.2000.0948     Document Type: Article

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