Fabrication of Si nanostructures for single electron device applications by anisotropic etching

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 12 SUPPL. B, 1996, Pages 6664-6667

  Hiramoto, Toshiro ^a   Ishikuro, Hiroki ^a   Saito, Kenichi ^a   Fujii, Tomoyuki ^a   Saraya, Takuya ^a   Hashiguchi, Gen ^a   Ikoma, Toshiaki ^b  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b Texas Instruments Japan Ltd   (Japan)

Author keywords

Anisotropic etching; MOSFET; Si nanostructures; Single electron devices; VLSI

Indexed keywords

EID: 0000003918     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.6664     Document Type: Article

References (6)

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6. H. Ishikuro, T. Fujii, T. Saraya, G. Hashiguchi, T. Hiramoto and T. Ikoma: Appl. Phys. Lett. 68 (1996) 3585.