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Applied Physics A: Materials Science and Processing

Volumn 74, Issue 6, 2002, Pages 741-745

Formation and charge control of a quantum dot by etched trenches and multiple gates

(3) Fu, Y a Willander, M b Wang, T H a

a INSTITUTE OF PHYSICS (China)

b CHALMERS UNIVERSITY OF TECHNOLOGY (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ETCHING; POISSON EQUATION; QUANTUM THEORY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; THREE DIMENSIONAL;

CHARGE CONTROL; COULOMB-BLOCKADE OSCILLATION; SCHRODINGER EQUATION; SINGLE ELECTRON TRANSISTOR;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0036604048 PISSN: 09478396 EISSN: None Source Type: Journal
DOI: 10.1007/s003390201298 Document Type: Article

Times cited : (1)

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