Self-aligned double-gate single-electron transistor derived from 0.12-μm-scale electron-beam lithography

Applied Physics Letters

Volumn 78, Issue 14, 2001, Pages 2070-2072

  Nishiguchi, K ^a   Oda, S ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035794352     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1360778     Document Type: Article

References (6)

1. J. R. Tucker, J. Appl. Phys. 72, 4399 (1992).
2. N. J. Stone and H. Ahmed, Electron. Lett. 35, 1883 (1999).
3. Y. Ono, Y. Takahashi, K. Yamazaki, M. Nagase, H. Namatsu, K. Kurihara, and K. Murase, Appl. Phys. Lett. 76, 3121 (2000).
4. N. Takahashi, H. Ishikuro, and T. Hiramoto, Appl. Phys. Lett. 76, 209 (2000).
5. H. Ishikuro and T. Hiramoto, Tech. Dig. Int. Electron Devices Meet. 119 (1998).
6. A. Dutta, S. Oda, Y. Fu, and M. Willander, Jpn. J. Appl. Phys., Part 1 39, 4647 (2000).