Designing two-dimensional electron gases in GaAs/InGaAs/AlGaAs, δ-doped AlGaAs/GaAs, and AlGaAs/InGaAs/GaAs heterostructures for single electron transistor application

Journal of Applied Physics

Volumn 89, Issue 3, 2001, Pages 1759-1763

  Fu, Y ^a   Wang, T H ^b   Willander, M ^a  

^a UNIVERSITY OF GOTHENBURG   (Sweden)

^b INSTITUTE OF PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000912231     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1328787     Document Type: Article

References (10)

1. A. T. Johnson, L. P. Kouwenhoven, W. de Jong, N. C. Van der Vaart, C. J. P. M. Harmans, and C. T. Foxon, Phys. Rev. Lett. 69, 1592 (1992).
2. T. Heinzel, S. Manus, D. A. Wharam, J. P. Kotthaus, G. Bohm, W. Klein, G. Trankle, and G. Weimann, Europhys. Lett. 26, 689 (1994).
3. T. H. Wang and S. Tarucha, Appl. Phys. Lett. 69, 406 (1996).
4. T. H. Wang and S. Tarucha, Appl. Phys. Lett. 71, 2499 (1997).
5. Semiconductors Group IV Elements and III-V Compounds, edited by O. Madelung (Springer, Berlin, 1991).
6. T. G. Andersson, Z. G. Chen, V. D. Kulakovskii, A. Uddin, and J. T. Vallin, Phys. Rev. B 37, 4032 (1988).
7. M. Beaudoin, A. Bensaada, R. Leonelli, P. Desjardins, R. A. Masut, L. Isnard, A. Chennouf, and G. L'Esperance, Phys. Rev. B 53, 1990 (1996).
8. S. Adachi, J. Appl. Phys. 58, R1 (1985).
9. Y. Fu and M. Willander, Surf. Sci. 391, 81 (1997).
10. Y. Fu and M. Willander, J. Appl. Phys. 78, 3504 (1995).