Arsenic and phosphorus double ion implanted source/drain junction for 0.25- and sub-0.25-μm MOSFET technology

IEEE Electron Device Letters

Volumn 20, Issue 1, 1999, Pages 42-44

  Lee, Hi Deok ^a  

^a Hynix Semiconductor Inc   (South Korea)

Author keywords

Double ion implantation; Shallow junction; Source drain junction; Sub 0.25 m mosfet

Indexed keywords

EID: 0003118986     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.737568     Document Type: Article

References (2)

1. +/p junctions," J. Appl. Phys., vol. 63, pp. 1990-1999. Mar. 1988.
2. J. Lin, S. Banerjee, J. Lee, and C. Teng, "Soft breakdown in titanium-suicided shallow source/drain junctions," IEEE Electron Device Lett., vol. 11, pp. 191-193, May 1990.