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Journal of Electronic Materials

Volumn 31, Issue 4, 2002, Pages 321-326

Thermodynamic modeling of native point defects and dopants of GaN semiconductors

(2) Li, Jing Bo a Tedenac, Jean Claude a

a UNIVERSITÉ DE MONTPELLIER (France)

Author keywords

GaN; Native point defects; Semiconductors; Thermodynamic modeling

Indexed keywords

CHARGE CARRIERS; ELECTRON ENERGY LEVELS; ELECTRONS; IMPURITIES; MATHEMATICAL MODELS; POINT DEFECTS; SEMICONDUCTOR DOPING; THERMODYNAMICS;

COMPOUND ENERGY MODEL (CEM);

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0036540243 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-002-0151-2 Document Type: Article

Times cited : (15)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.