Characteristics of Si-doped GaN compensated with Mg

Journal of Crystal Growth

Volumn 193, Issue 4, 1998, Pages 491-495

  Leem, Jae Young ^a   Lee, Cheul Ro ^a   Lee, Joo In ^a   Noh, Sam Kyu ^a   Kwon, Young Soo ^b   Ryu, Yeun Hee ^b   Son, Sung Jin ^c  

^a Korea Research Institute of Standards and Science   (South Korea)

^b Kyung Hee University   (South Korea)

^c Chonbuk National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; ENERGY GAP; FILM GROWTH; HALL EFFECT; MAGNESIUM; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SILANES;

BAND-EDGE EMISSION; GALLIUM NITRIDE;

SEMICONDUCTING FILMS;

EID: 0032475661     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00604-6     Document Type: Article

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