Effect of growth temperature on point defect density of unintentionally doped GaN grown by metalorganic chemical vapor deposition and hydride vapor phase epitaxy

Journal of Applied Physics

Volumn 86, Issue 1, 1999, Pages 281-288

  Joshkin, V A ^a   Parker, C A ^a   Bedair, S M ^a   Muth, J F ^a   Shmagin, I K ^a   Kolbas, R M ^a   Piner, E L ^b   Molnar, R J ^c  

^a North Carolina State University   (United States)

^b NORTH CAROLINA STATE UNIVERSITY   (United States)

^c MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CORRELATION METHODS; ELECTRON ENERGY LEVELS; EMISSION SPECTROSCOPY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; POINT DEFECTS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; THERMAL EFFECTS; VAPOR PHASE EPITAXY;

GALLIUM NITRIDE; HYDRIDE VAPOR PHASE EPITAXY (HVPE);

SEMICONDUCTING FILMS;

EID: 0032614849     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.370727     Document Type: Article

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