Analysis and modeling of a digital CMOS circuit operation and reliability after gate oxide breakdown: A case study

Microelectronics Reliability

Volumn 42, Issue 4-5, 2002, Pages 555-564

  Kaczer, B ^a   Degraeve, R ^a   Rasras, M ^a   De Keersgieter, A ^a   Van de Mieroop, K ^a   Groeseneken, G ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

DIGITAL CIRCUITS; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRON MICROSCOPY; FAILURE ANALYSIS; FIELD EFFECT TRANSISTORS; GATES (TRANSISTOR); RELIABILITY; SOLID STATE OSCILLATORS; STATISTICAL METHODS;

RING OSCILLATORS;

CMOS INTEGRATED CIRCUITS;

EID: 0036540085     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(02)00026-4     Document Type: Article

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