Substrate hole current origin after oxide breakdown

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2000, Pages 537-540

  Rasras, M ^a   De Wolf, I ^a   Groeseneken, G ^a   Degraeve, R ^a   Maes, H E ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; IONIZATION; MICROSCOPIC EXAMINATION; OXIDES; SPECTRUM ANALYSIS; SUBSTRATES;

OXIDE BREAKDOWN; PHOTON EMISSION MICROSCOPY; SUBSTRATE HOLE CURRENT;

ELECTRIC CURRENTS;

EID: 0034453898     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. Quasi-breakdown of ultrathin gate oxide under high field stress
2. On the properties of the gate and substrate current after soft breakdown in ultrathin oxide layers
3. Experimental examination of physical model for direct tunneling current in unstressed/stressed ultrathin gate oxides
4. Origin of the substrate current after softbreakdown in thin oxide n-MOSFET's
5. Gate oxide breakdown model in MOS transistors
6. A simple, cost effective, and very sensitive alternative for photon emission spectroscopy
7. Photo-carrier generation as the origin of Fowler-Nordheim-induced substrate hole current in thin oxides