Origin of substrate hole current after gate oxide breakdown

Journal of Applied Physics

Volumn 91, Issue 3, 2002, Pages 2155-2160

  Rasras, Mahmoud ^a   Wolf, Ingrid De ^b   Groeseneken, Guido ^b   Degraeve, Robin ^b   Maes, Herman E ^b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

BREAKDOWN SPOTS; CARRIER SEPARATION; ELECTRON IMPACT-IONIZATION; GATE OXIDE BREAKDOWN; HIGH ELECTRIC FIELDS; HOLE CURRENT; HOLE RECOMBINATION; LEAKAGE PATHS; LIGHT EMISSION SPECTRA; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; MINORITY CARRIER; NEGATIVE GATE; NMOSFET; OXIDE BREAKDOWN; P-N JUNCTION; PHOTON EMISSION MICROSCOPY; POSITIVE GATE BIAS;

ELECTRIC FIELDS; EMISSION SPECTROSCOPY; HOT ELECTRONS; IMPACT IONIZATION; LIGHT EMISSION; MOSFET DEVICES; SPECTRUM ANALYSIS;

SUBSTRATES;

EID: 33845396041     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1434550     Document Type: Article

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