An experimental study of the effect of quantization on the effective electrical oxide thickness in MOS electron and hole accumulation layers in heavily doped Si

IEEE Transactions on Electron Devices

Volumn 47, Issue 3, 2000, Pages 643-646

  Chindalore, G ^a   Shih, W K ^a   Jallepalli, S ^a   Hareland, S A ^a   Tasch, A F ^a   Maziar, C M ^a  

^a The University of Texas at Austin   (United States)

Author keywords

Accumulation quantization; Capacitance; Electrical oxide thickness; Heavy doping; Potential wells

Indexed keywords

CAPACITANCE; COMPUTER SIMULATION; ELECTRIC POTENTIAL; QUANTUM THEORY; SEMICONDUCTOR DOPING; SUBSTRATES;

ACCUMULATION QUANTIZATION;

SEMICONDUCTING SILICON;

EID: 0033897407     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.824741     Document Type: Article

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