Infrared absorption study of rapid thermal oxidation and in situ steam generation of thin SiO 2 films by gradient etching preparation

Journal of Applied Physics

Volumn 91, Issue 7, 2002, Pages 4747-4750

  Nagai, Naoto ^a   Terada, K ^a   Muraji, Y ^a   Hashimoto, H ^a   Maeda, T ^b   Maeda, Y ^c   Tahara, E ^c   Tokai, N ^c   Hatta, A ^d  

^a TORAY RESEARCH CENTER INC   (Japan)

^b Electrical Technical Laboratory   (Japan)

^c Applied Materials Japan Incorporated   (Japan)

^d TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GRAZING INCIDENCE X-RAY REFLECTOMETRY; IN-SITU STEAM GENERATION; IR SPECTRUM; LOW CONCENTRATIONS; OXYGEN-DEFICIENT DEFECTS; PEAK SHIFT; RAPID THERMAL OXIDATION; STRETCHING MODES; WAVE NUMBERS;

DEFECT STRUCTURES; ETCHING; HYDROGEN; INFRARED SPECTROSCOPY; REGENERATORS; SILICON; STEAM GENERATORS;

FILM PREPARATION;

EID: 0036536550     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1459097     Document Type: Article

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