Plastic deformation of nanometric single crystal silicon wire in AFM bending test at intermediate temperatures

Journal of Microelectromechanical Systems

Volumn 11, Issue 2, 2002, Pages 125-135

  Namazu, Takahiro ^b   Isono, Yoshitada ^a,b   Tanaka, Takeshi ^b  

^a IEEE   (Japan)

^b RITSUMEIKAN UNIVERSITY   (Japan)

Author keywords

Activation Gibbs free energy; Atomic force microscope (AFM); Bending tests; Fracture strength; Plastic deformation behavior; Size effect; Slip line; Young's modulus

Indexed keywords

ANISOTROPIC WET ETCHING; FIELD ENHANCED ANODIZATION; INTERMEDIATE TEMPERATURE; NANOMETRIC SPECIMEN; SILICON DIAPHRAGM; SILICON WIRE; SIZE EFFECT; SLIP LINE; TEMPERATURE DEPENDENCE; THERMAL ACTIVATED PROCESS;

ATOMIC FORCE MICROSCOPY; BENDING (DEFORMATION); DISLOCATIONS (CRYSTALS); ELASTIC MODULI; ETCHING; FRACTURE TOUGHNESS; GIBBS FREE ENERGY; PLASTIC DEFORMATION; SHEAR STRESS; SINGLE CRYSTALS; THERMAL EFFECTS; WIRE;

SEMICONDUCTING SILICON;

EID: 0036529974     PISSN: 10577157     EISSN: None     Source Type: Journal    
DOI: 10.1109/84.993447     Document Type: Article

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