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Volumn 41, Issue 2 A, 2002, Pages 754-757
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1.55 μm InAsP/InGaAsP strained multiple-quantum-well laser diodes grown by solid-source molecular beam epitaxy
a a a a |
Author keywords
InAsP; Laser diode; Photoluminescence; SSMBE; Strained MQW
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Indexed keywords
CURRENT DENSITY;
HETEROJUNCTIONS;
MOLECULAR BEAM EPITAXY;
PHOTOLUMINESCENCE;
SEMICONDUCTING INDIUM COMPOUNDS;
SEMICONDUCTOR QUANTUM WELLS;
MULTIPLE QUANTUM WELLS (MQW);
SOLID-SOURCE MOLECULAR BEAM EPITAXY (SSMBE);
SEMICONDUCTOR LASERS;
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EID: 0036478449
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.41.754 Document Type: Article |
Times cited : (2)
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References (21)
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