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Volumn 41, Issue 2 A, 2002, Pages 754-757

1.55 μm InAsP/InGaAsP strained multiple-quantum-well laser diodes grown by solid-source molecular beam epitaxy

Author keywords

InAsP; Laser diode; Photoluminescence; SSMBE; Strained MQW

Indexed keywords

CURRENT DENSITY; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

EID: 0036478449     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.754     Document Type: Article
Times cited : (2)

References (21)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.