Studies on incorporation of As2 and As4 in III-V compound semiconductors with two group V elements grown by molecular beam epitaxy

Journal of Crystal Growth

Volumn 224, Issue 3-4, 2001, Pages 224-229

  Hao, Zhi Biao ^a   Ren, Zai Yuan ^a   Guo, Wen Ping ^a   Luo, Yi ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

A1. Computer simulation; A3. Molecular beam epitaxy; B2. Semiconducting III V materials; B2. Semiconducting ternary compounds

Indexed keywords

ACTIVATION ENERGY; ARSENIC; COMPUTER SIMULATION; DISSOCIATION; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR GROWTH; THERMAL EFFECTS; THERMODYNAMICS;

INDIUM ARSENIC PHOSPHIDE;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0035307438     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01019-3     Document Type: Article

References (19)