Effects of increased growth rate of well layer on 2.1% compressive strained InAsP-MQWs grown by metalorganic molecular beam epitaxy (MOMBE)

Journal of Crystal Growth

Volumn 205, Issue 4, 1999, Pages 489-496

  Ogasawara, Matsuyuki ^a   Mitsuhara, Manabu ^a   Itoh, Masayuki ^a   Amano, Toshimasa ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPRESSIVE STRESS; DEGRADATION; EPITAXIAL GROWTH; HETEROJUNCTIONS; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR LASERS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

COMPRESSIVE STRAIN; GROWTH RATE; METALORGANIC MOLECULAR BEAM EPITAXY; MULTIQUANTUM WELLS; SURFACE UNDULATION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0033322348     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00297-3     Document Type: Article

References (17)

1. Schneider R.P. Jr., Wessels B.W. J. Electron. Mater. 20:1991;1117.
2. Seki S., Yamanaka T., Lui W., Yoshikuni Y., Yokoyama K. IEEE J. Quantum Electron. 30:1994;500.
3. Oohashi H., Hirono T., Seki S., Sugiura H., Nakano J., Yamamoto M., Tohmori Y., Yokoyama K. J. Appl. Phys. 77:1995;4119.
4. Sugiura H., Mitsuhara M., Oohashi H., Hirono T., Nakashima K. J. Crystal Growth. 147:1995;1.
5. Thiagarajan P., Bernussi A.A., Temkin H., Robinson G.Y., Sergent A.M., Logan R.A. Appl. Phys. Lett. 67:1995;3676.
6. Carlin J.F., Syrbu A.V., Berseth C.A., Behrend J., Rudra A., Kapon E. Appl. Phys. Lett. 71:1997;13.
7. Sugiura H., Ogasawara M., Mitsuhara M., Itoh M., Kondo Y. J. Crystal Growth. 188:1998;260.
8. Imajo Y., Kasukawa A., Namegaya T., Kikuta T. Appl. Phys. Lett. 61:1992;2506.
9. Ponchet A., Rocher A., Emery J.-Y., Strack C., Goldstein L. J. Appl. Phys. 74:1993;3778.
10. Smith A.D., Briggs A.T.R., Scarrott K. Xiao Zhou, U. Bangert. Appl. Phys. Lett. 65:1994;2311.
11. Sirbu A.V., Behrend J., Fernandez J., Carlin J.F., Berseth C.-A., Iakovlev V.P., Rudra A., Kapon E. J. Crystal Growth. 188:1998;338.
12. Grandjean N., Massies J., Leroux M., Leymarie J., Vasson A., Vasson A.M. Appl. Phys. Lett. 64:1994;2664.
13. Ogasawara M., Sugiura H., Mitsuhara M., Yamamoto M., Nakao M. J. Appl. Phys. 84:1998;4775.
14. Seltzer C.P., Perrin S.D., Tatham M.C., Cooper D.M. Electron. Lett. 27:1991;1268.
15. Guyer J.E., Voorhees P.W. Phys. Rev. Lett. 74:1995;4031.
16. Neave J.H., Dobson P.J., Joyce B.A., Zhang J. Appl. Phys. Lett. 47:1985;100.
17. Itoh M., Sugiura H., Yasaka H., Kondo Y., Kishi K., Fukuda M., Itaya Y. Appl. Phys. Lett. 72:1998;1553.