High characteristics temperature of strain-compensated 1.3 μm InAsP/InGaP/InP multi-quantum well lasers grown by all solid source molecular beam epitaxy

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1996, Pages 735-737

  Savolainen, P ^a   Toivonen, M ^a   Salokatve, A ^a   Asonen, H ^a   Murison, R ^a  

^a TAMPERE UNIVERSITY OF TECHNOLOGY   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; STRAIN;

SOLID SOURCE MOLECULAR BEAM EPITAXY;

QUANTUM WELL LASERS;

EID: 0029708750     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (13)