Strain-compensated InGa(As)P-InAsP active regions for 1.3-μm wavelength lasers

IEEE Photonics Technology Letters

Volumn 10, Issue 1, 1998, Pages 42-44

  Dries, J Christopher ^a,b   Gokhale, Milind R ^a,b   Uenohara, Hiroyuki ^b,c   Forrest, Stephen R ^a,b  

^a IEEE   (United States)

^b Princeton University   (United States)

^c NTT CORPORATION   (Japan)

Author keywords

Quantum well lasers; Semiconductor lasers

Indexed keywords

CURRENT DENSITY; ENERGY GAP; MOLECULAR BEAM EPITAXY; OPTIMIZATION; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR GROWTH;

SINGLE QUANTUM WELLS (SQW); STRAIN COMPENSATED LASERS;

QUANTUM WELL LASERS;

EID: 0031674518     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.651096     Document Type: Article

References (13)

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