MOVPE Growth of Strained InAsP/InGaAsP Quantum-Well Structures for Low-Threshold 1.3-µm Lasers

IEEE Journal of Quantum Electronics

Volumn 30, Issue 2, 1994, Pages 554-561

  Yamamoto, Mitsuo ^a   Yamamoto, Norio ^a   Nakano, Junichi ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; EPITAXIAL GROWTH; ORGANOMETALLICS; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR LASERS; STRAIN;

MULTIPLE QUANTUM WELLS; VAPOR PHASE EPITAXY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0028378771     PISSN: 00189197     EISSN: 15581713     Source Type: Journal    
DOI: 10.1109/3.283802     Document Type: Article

References (23)

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