Incorporation of arsenic and phosphorus in GaxIn1 - XAsyP1 - y alloys grown by molecular-beam epitaxy using solid phosphorus and arsenic valved cracking cells

Journal of Applied Physics

Volumn 79, Issue 10, 1996, Pages 7652-7656

  Baillargeon, J N ^a   Cho, A Y ^a   Cheng, K Y ^a,b  

^a LUCENT TECHNOLOGIES   (United States)

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001342106     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.362429     Document Type: Article

References (14)

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